深圳市中科晟科技有限公司

■ Features

● Low on-resistance.

● Fast switching speed.

● Low voltage drive(2.5V) makes this 

 device ideal for portable equipment.

● Easily designed drive circuits.

● Easy to parallel.

Parameter Symbol Test Conditions Min Typ Max Unit

Drain-Source Breakdown Voltage VDSS ID=100μA, VGS=0V 30 V

Zero Gate Voltage Drain Current IDSS VDS=30V, VGS=0V 1 uA

Gate-Body Leakage Current IGSS VDS=0V, VGS=±20V ±1 uA

Gate Threshold Voltage VGS(th) VDS=VGS , ID=250μA 0.8 1.5 V

 Static Drain-Source On-Resistance RDS(On)

 VGS=4V, ID=10mA 5 8

 VGS=2.5V, ID=1mA 7 13

 Ω

Forward Transfer admittance | Yfs | VDS=3V, ID=10mA 20 mS

Input Capacitance Ciss 13

Output Capacitance Coss VGS=0V, VDS=5V, f=1MHz 9 pF

Reverse Transfer Capacitance Crss 4

 Turn-On DelayTime td(on) 15

  VGS=5V, VDS=5V, RL=500Ω,RGEN=10Ω

 Turn-On Rise Time tr 35

 Turn-Off DelayTime t

 80 d(off)

 I =10mA D

 Turn-Off Fall Time

 tf 80

 ns